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Professor/Vice Chancellor
Research in Microelectronics

Professional Affiliation

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Dr. Ahmed completed the PhD degree in Microelectronics from the University of Cambridge, U.K., in 1995, and joined academia where he worked at different positions including Professor; Chairman; Dean; Executive Vice President and Vice Chancellor.

Dr. Ahmed research interests are in Microelectronics, Microwave devices and RF Engineering. He has supervised numerous MS and PhD research projects. He authored 125+ research papers and his ISI research impact factor is 80+ with citation index over 900+.

Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS and MTTS (USA).

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Representative Publications

M. M. Ahmed, M. Riaz and U. F. Ahmed, “An improved model for the I − V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel,” Journal of Computational Electronics, vol. 16, no. 3, pp. 514-525, 2017.

M. M. Ahmed, K. S. Karimov and S. A. Moiz, “Photoelectric behavior of n-GaAs/orange dye, vinyl-ethynyl trimethylpiperidole/conductive glass sensor,” Thin Solid Films, vol. 516, no. 21, pp. 7822-7827, 2008.

M. M. Ahmed and S. A. Moiz, “Steering algorithm for drift free control systems,” Communications in Applied Analysis, vol. 11, no. 3-4, pp. 485-514, 2007.

M. M. Ahmed, K. S. Karimov and S. A. Moiz, “Temperaturedependent I − V characteristics of organic-inorganic heterojunction diodes,” IEEE Transactions on Electron Devices, vol. 51, no. 1, pp. 121-126, 2004.

M. M. Ahmed, “An improved method to estimate intrinsic small signal parameters of a GaAs MESFET from measured DC characteristics,” IEEE Transactions on Electron Devices, vol. 50, no. 11, pp. 2196-2201, 2003.

M. M. Ahmed, “Schottky barrier depletion modification-a source of output conductance in submicron GaAs MESFETs,” IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 830-834, 2001.

M. M. Ahmed, “Optimization of active channel thickness of mmwavelength GaAs MESFETs by using a nonlinear I − V model,” IEEE Transactions on Electron Devices, vol. 47, no. 2, pp. 299-
303, 2000.

M. M. Ahmed, “Effects of sintering on Au/Ti/GaAs Schottky barrier submicron metal-semiconductor field-effect transistors characteristics,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 16, no. 4, pp. 2034-2037, 1998.

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